定量电子晶体学硼对Ni3Al的电荷密度分布的影响

阐述了定量电子晶体学测定晶体电荷密度分布的基本原理和方法，不足之处和改善途径。以硼对Ｎｉ３Ａｌ的电荷密度分布的影响为实例，介绍了定量电子晶体学在研究晶体电子结构方面的应用前景。     

准连续Ti~(3+):Al_2O_3可调谐激光的研究

本文给出了Ti~(3+):Al_2O_3的准连续可调谐激光的实验结果。采用Nd:YAG内腔倍频532nm的准连续输出作为泵浦源,得到Ti~(3+):Al_2O_3的连续可调谐输出。波长覆盖范围为685nm到821nm。最大输出功率为293mW,斜率效率为20％,在805nm处的窄谱输出功率达240mW,总体转换效举为26％。     

REHEATING TEMPERATURE CONTRAST AND MICROSTRUCTURES OF 7075 Al ALLOY CAST BY LIQUIDUS SEMI-CONTINUOUS CASTING

In this study, reheating of liquidus semi-continuous cast billets of 7075 Al alloy was carried out in a resistance furnace, and the temperature contrast of the outer and the center of the reheated billets was investigated, then the reheating microstructures were investigated. Results show that: the difference of temperature between the outer and center is small and the difference of their microstructures are also small. During reheating at 576℃ the spheroidization of grains is significant after 5min and no rosettes are visible after 20min by optical microscopy. Similar observations were madeon materials reheated at 596℃, but the ripening process is faster. The grains growup to 30-60μm, fine enough for thixoforming.     

等离子体横向刻蚀硅的特性研究

研究了用SiO2 +Al作掩模 ,SF6 +O2 混合气体等离子体对Si的横向刻蚀 ,其结果表明 ,在SF6 +O2 等离子体气氛中 ,Al是很好的保护膜 ,可以在待悬浮器件下形成大的开孔。因此 ,预计用这种技术 ,可以在Si片上集成横向尺寸为数百微米 ,具有优良高频性能的MEMSRF/MW无源器件 ,如开关、传输线、电感和电容等。     

电子镇流器用高压长寿命铝电解电容器

铝电解电容器是节能灯用电子镇流器的关键元件，由于镇流器的工作环境严酷，其电容器最易失效。改进后的ＣＤ１１Ｈ系列电子镇流器用铝电解电容器标准突出了１０５℃下满负荷工作３０００ｈ的高可靠性要求。设计目标放在延长寿命，提高可靠性，减少失效率方面。选用电容器时要注意工作电压、上限工作温度、耐久性。     

连续挤压法介绍

连续挤压法的特点是：挤压所需的压力是借助一个回转的摩擦轮来实现的。摩擦轮的轮缘上设有一个凹槽，其断面取决于原坯的断面（线材坯料）。本文将就这种工艺的设备和有关铝材生产阶段中的一些问题作一简介。     

含RDX的硝胺丁羟推进剂能量特性研究

采用最小自由能平衡流法对RDX/AP/Al/HTPB推进剂能量特性进行了理论计算。通过BSF165mm和BSF315mm发动机点火试验,研究了RDX含量、燃烧室压强对RDX/AP/Al/HTPB推进剂能量特性的影响规律。根据理论计算和发动机试验结果,对配方进行了优化设计,与某型号760mm全尺寸发动机的实测结果对比,其实测比冲高达2428.1N·s·kg-1(pc=6.86MPa),验证了RDX的加入对RDX/AP/Al/HTPB推进剂比冲有较突出贡献。     

Atmospheric and low pressure shadow masked MOVPE growth of InGaAs(P)/InP and (In)GaAs/(Al)GaAs heterostructures and quantum wells

The shadow masked growth technique is presented as a tool to achieve thickness and bandgap variations laterally over the substrate during metalorganic vapor phase epitaxy. Lateral thickness and bandgap variations are very important for the fabrication of photonic integrated circuits, where several passive and active optical components need to be integrated on the same substrate. Several aspects of the shadow masked growth are characterized for InP based materials as well as for GaAs based materials. Thickness reductions are studied as a function of the mask dimensions, the reactor pressure, the orientation of the masked channels and the undercutting of the mask. The thickness reduction is strongly influenced by the mask dimensions and the reactor pressure, while the influence of the orientation of the channels and the amount of undercutting is only significant for narrow mask windows. During shadow masked growth, there are not only thickness variations but also compositional variations. Therefore, we studied the changes in In/Ga and As/P ratios for InGaAs and InGaAsP layers. It appears that mainly the In/Ga-ratio is responsible for compositional changes and that the As/P-ratio remains unchanged during shadow masked growth.     

马钢10#高炉高Al2O3炉渣冶炼实践

针对10#高炉炉渣中Al2O3高的特性,通过对炉渣性能的分析,调整操作制度,改善炉渣性能,加强炉前管理等,使10#高炉生产水平明显提高.     

Ti/Al Interaction and Austenite Grain Control in Crankshaft Manufacturing with 38MnSiVS5 Steel

38MnSiVS5 steel is similar to 38MnVS6 steel (EN), the difference being the addition of a small Ti content. Typical Ti and Al contents in the chemical composition of 38MnSiVS5 steel are Ti=0.020 and Al=0.035 mass%. Both elements combine easily with nitrogen, especially Ti, and it has been observed that relatively high Al levels are harmful for austenite grain size control at reheating temperatures. In this work 38MnSiVS5 steel is used to manufacture a large number of castings, varying only the Ti and Al contents and obtaining ingots with a different Ti/Al ratio in each case. The results show that abnormal growth of the austenitic grain occurs irrespective of the Ti and Al contents, due fundamentally to the partial dissolution and coarsening of TiN precipitates. However, the steels with high Al contents present worse behaviour due to the formation of a second type of precipitates, namely AIN, which quickly dissolve between 1000 and 1100°C, causing a drastic decline in local pinning forces that gives rise to more pronounced abnormal growth of the affected grains.